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The Insulated Gate Bipolar Transistor (IGBT) is the youngest member of the high voltage switch family. Current flow through the device is conveniently controlled through a 15V high-impedance voltage source, thus enabling control of high currents with very low control power.
HiPak™ modules with SPT Chips - click here for further information & downloading datasheets.
The HiPak™ modules are high power IGBTs in industry standard housings with the popular 190 x 140 mm footprint. The initial ABB offering is for devices using Aluminium Silicon Carbide (AlSiC) base-plate material for excellent thermal cycling capability as required in traction applications and Aluminium Nitride (AlN) isolation for low thermal resistance.
These products are available as single-switch configuration (IGBT +FW Diode).
HiPak™ modules are realised with ABB's advanced Soft Punch Through (SPT) chip technology which combines low losses with soft switching performance and rugged Safe Operating Area (SOA).
StakPak™ IGBT Press-Packs - click here to open new window with part numbers & datasheets.
StakPak™ is a family of high power IGBT press-packs and diodes in an advanced modular housing which guarantees uniform chip pressure even in multiple-device stacks.
Although the most common package for IGBTs is the isolated module, for applications requiring series connection, non-isolated, pressure-assembled devices (press-packs) are preferred for many reasons, not least of which is their ability to fail short as opposed to open circuit. Since IGBTs are made with multiple parallel chips, there is a difficulty - with conventional press-packs - in assuring uniform pressure on all chips; a difficulty which increases with the number of devices in a stack. ABB has solved these problems with a patented spring technology.
The StakPak™, optimised for series connection, features a modular concept based on "sub-modules" allowing the cost-effective realisation of a range of products of different current ratings and IGBT/diode ratios.
The initial ABB StakPak™ offering is shown below. Higher voltages, and asymmetric devices are in development.
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